Etude et réalisation d'un émetteur à infrarouge

~onc(usion genera(

Notre projet vise à réaliser un émetteur infrarouge.

Ce travail nous a permis, premièrement, d'approfondir nos connaissances théoriques en cherchant dans différentes sources de documentation, les composants nécessaires et les techniques adéquates qui peuvent nous aider à résoudre certains problèmes. Ensuite, l'application de ces connaissances dans la pratique nous a permis d'apprendre à manipuler ces composants de façon plus concrète.

Tous ces efforts, ont donc donné naissance à ce modeste, que nous considérons comme le fruit d'une première expérience très intéressante sur tous les plans.

Cette réalisation serait, néanmoins amélioré par un récepteur infrarouge ( pour ondes moyennes par exemple), qui permettrait de recevoir des émetteurs locaux ou étrangers( la nuit) ou être utilisé dans des système antivol.

Liste ties Composants

Composant	Valeur	Puissance
Les résistances
R1	1KOhm	1/4W
R2	27KOhm	1/4W
R3	220Ohm	1/4W
Les condensateurs
C1	3300pf	Polyester
	100nf	Polyester
C3	47uf	Electrolytique
Les diodes
Ds1	1N4007
Dl1	LED
Dtx	Diode IR émettrice (CQX89)
Circuit intégré
IC1	NE 555

[1] Pierre Mayé Aide-mémoire Composants électroniques Les Infrarouges en électronique, Dunod, 2003

[2] ELECTRONIQUE magazine; n° 16 , page 30-38.

[3] L'image proche infrarouge : une information essentielle (http:/ / www. ifn. fr/ spip/ IMG/ pdf/ IF_25_proche_infrarouge. pdf), n°25, Inventaire Forestier National (France), 2010. Consulté le 6 juillet 2010

[4] Solberg C. *, Saugen E., Swenson L. P., Bruun L., Isaksson T. ; Determination of fat in live farmed Atlantic salmon using non-invasive NIR techniques ; Department of Fisheries and Natural Science, Bodo Regional University, N-8049 Bodo, Norway ; Journal of the Science of Food and Agriculture, 2003, Vol. 83, p. 692-696.

[5] Tahar Neffati, ÉLECTRONIQUE de A à Z (c) Dunod, Paris, 2006 ISBN 2 10 049487 2

[6] Site web: - http://infrarouge.hebfree.org/pr%C3%83%%A9sentation%20et%20definition.html -www.acma.gov.au/web/standard/1001/pc=pc-9150.

-Fr.wikipedia.org/wiki/NE555.

Timer NE/SA/SE555/SE555C

D, N, FE Packages

VCC

DISCHARGE THRESHOLD CONTROL VOLTAGE

VCC NC

DISCHARGE

NC THRESHOLD

NC

CONTROL VOLTAGE

GND TRIGGER OUTPUT

RESET

GND
NC
TRIGGER
OUTPUT
NC
RESET
NC

TOP VIEW

DESCRIPTION

The 555 monolithic timing circuit is a highly stable controller capable of producing accurate time delays, or oscillation. In the time delay mode of operation, the time is precisely controlled by one external resistor and capacitor. For a stable operation as an oscillator, the free running frequency and the duty cycle are both accurately controlled with two external resistors and one capacitor. The circuit may be triggered and reset on falling waveforms, and the output structure can source or sink up to 200mA.

FEATURES

· Turn-off time less than 21.ts

· Max. operating frequency greater than 500kHz

· Timing from microseconds to hours

· Operates in both astable and monostable modes

· High output current

· Adjustable duty cycle

· TTL compatible

· Temperature stability of 0.005% per °C

APPLICATIONS

· Precision timing

· Pulse generation

· Sequential timing

· Time delay generation

· Pulse width modulation

PIN CONFIGURATIONS

ORDERING INFORMATION

DESCRIPTION	TEMPERATURE RANGE	ORDER CODE	DWG #
8-Pin Plastic Small Outline (SO) Package	0 to +70°C	NE555D	0174C
8-Pin Plastic Dual In-Line Package (DIP)	0 to +70°C	NE555N	0404B
8-Pin Plastic Dual In-Line Package (DIP)	-40°C to +85°C	SA555N	0404B
8-Pin Plastic Small Outline (SO) Package	-40°C to +85°C	SA555D	0174C
8-Pin Hermetic Ceramic Dual In-Line Package (CERDIP)	-55°C to +125°C	SE555CFE
8-Pin Plastic Dual In-Line Package (DIP)	-55°C to +125°C	SE555CN	0404B
14-Pin Plastic Dual In-Line Package (DIP)	-55°C to +125°C	SE555N	0405B
8-Pin Hermetic Cerdip	-55°C to +125°C	SE555FE
14-Pin Ceramic Dual In-Line Package (CERDIP)	0 to +70°C	NE555F	0581B
14-Pin Ceramic Dual In-Line Package (CERDIP)	-55°C to +125°C	SE555F	0581B
14-Pin Ceramic Dual In-Line Package (CERDIP)	-55°C to +125°C	SE555CF	0581B

Timer NE/SA/SE555/SE555C

BLOCK DIAGRAM

VCC

8

·

THRESH-

OLD

6 0--

COMPARATOR

CONTROL
VOLTAGE

0 5

TRIGGER --0 2

DIS-

CHARGE

7 0

FLIP FLOP

RESET
0 4

COMPARATOR

OUTPUT
STAGE

0 3 O 1

OUTPUT GND

EQUIVALENT SCHEMATIC

NOTE: Pin numbers are for 8-Pin package

Timer NE/SA/SE555/SE555C

ABSOLUTE MAXIMUM RATINGS

SYMBOL	PARAMETER	RATING	UNIT
	Supply voltage
Vcc	SE555	+18	V
	NE555, SE555C, SA555	+16	V
PD	Maximum allowable power dissipation^1	600	mW
TA	Operating ambient temperature range
	NE555	0 to +70	°C
	SA555	-40 to +85	°C
	SE555, SE555C	-55 to +125	°C
TSTG	Storage temperature range	-65 to +150	°C
TSOLD	Lead soldering temperature (10sec max)	+300	°C

NOTES:

1. The junction temperature must be kept below 125°C for the D package and below 150°C for the FE, N and F packages. At ambient temperatures above 25°C, where this limit would be derated by the following factors:

D package 160°C/W FE package 150°C/VV N package 100°C/W F package 105°C/W

Timer NE/SA/SE555/SE555C

DC AND AC ELECTRICAL CHARACTERISTICS

TA = 25°C, Vcc = +5V to +15 unless otherwise specified.

				SE555		NE555/SE555C
SYMBOL	PARAMETER	TEST CONDITIONS							UNIT
			Min	Typ	Max	Min	Typ	Max
Vcc	Supply voltage		4.5		18	4.5		16	V
ICC	Supply current (low	Vcc=5V, RL=0.		3	5		3	6	mA
	state)^1	Vcc=15V, RL=oo		10	12		10	15	mA
	Timing error (monostable)	RA=2k52 to 1001d2
tM	Initial accuracy^2	C=0.1gF		0.5	2.0		1.0	3.0	%
Atm/AT	Drift with temperature			30	100		50	150	ppm/°C
AtM/AVS	Drift with supply voltage			0.05	0.2		0.1	0.5	%N
	Timing error (astable)	RA, Rs=1k52 to 100kO
to	Initial accuracy^2	C=0.1gF		4	6		5	13	%
AtA/AT	Drift with temperature		Vcc=15V		500			500	ppm/°C
AtA/AVS	Drift with supply voltage			0.15	0.6		0.3	1	%N
VC	Control voltage level	Vcc=15V	9.6	10.0	10.4	9.0	10.0	11.0	V
		Vcc=5V	2.9	3.33	3.8	2.6	3.33	4.0	V
VTH	Threshold voltage	Vcc=15V	9.4	10.0	10.6	8.8	10.0	11.2	V
ITH	Threshold current3	Vcc=5V	2.7	3.33 0.1	4.0 0.25	2.4	3.33 0.1	4.2 0.25	V gA
VTRIG	Trigger voltage	Vcc=15V	4.8	5.0	5.2	4.5	5.0	5.6	V
'TRIG VRESET	Trigger current Reset voltage4	Vcc=5V VTRIG=OV Vcc=1 5V, VTH =10.5V	1.45 0.3	1.67 0.5	1.9 0.9 1.0	1.1 0.3	1.67 0.5	2.2 2.0 1.0	V IAA V
'RESET	Reset current	VREsET=0.4V		0.1	0.4		0.1	0.4	mA
	Reset current	VREsET=OV		0.4	1.0		0.4	1.5	mA
		Vcc=15V
		IsiNk=10mA		0.1	0.15		0.1	0.25	V
Vol	Output voltage (low)	IsiNk=50mA IsINK=^100mA		0.4 2.0	0.5 2.2		0.4 2.0	0.75 2.5	V V
		lsiNk=200mA		2.5	V		2.5
		VCC=5V
		IsiNk=8mA		0.1	0.25		0.3	0.4	V
		IsiNk=5mA		0.05	0.2		0.25	0.35	V
		Vcc=15V
		ISOURCE^=200MA		12.5		V	12.5
VOH	Output voltage (high)	'SOURCE^= 1 00mA	13.0	13.3		12.75	13.3		V
		VCC=5V
tOFF	Turn-off times	IsouRcE=100mA VRESET=VCC	3.0	3.3 0.5	2.0	2.75	3.3 0.5	2.0	V gs
tR	Rise time of output			100	200		100	300	ns
tF	Fall time of output			100	200		100	300	ns
	Discharge leakage current			20	100		20	100	nA

NOTES:

1. Supply current when output high typically lmA less.

2. Tested at Vcc=5V and Vcc=15V.

3. This will determine the max value of RA+RB, for 15V operation, the max total R=10MO, and for 5V operation, the max. total R=3.4MO.

4. Specified with trigger input high.

5. Time measured from a positive going input pulse from 0 to 0.8xVcc into the threshold to the drop from high to low of the output. Trigger is tied to threshold.

Timer NE/SA/SE555/SE555C

0 0 1 0.2 0 3 0.4 (XVCC)

LOWEST VOLTAGE LEVEL OF TRIGGER PULSE

SUPPLY VOLTAGE - VOLTS

5.0 10.0 15.0

-50 -25 0 +25 +50 +75 +100+125

TEMPERATURE - °C

10

1.0

VOUT --VOLTS

0.1

100

100

1 0 2.0

1 0 2.0

50 100

5.0 10 20 50

5.0 10 20 50

(SINK - mA

⁽SINK mA

⁽SINK mA

Delay Time
vs Supply Voltage

High Output Voltage Drop
vs Output Source Current

Propagation Delay vs Voltage
Level of Trigger Pulse

20

1.0

20

50 100

5 0 10 20

'SOURCE - mA

0 5 10 15

SUPPLY VOLTAGE - V

0 01 02 03 04

LOWEST VOLTAGE LEVEL
OF TRIGGER PULSE - XVcc

Low Output Voltage
vs Output Sink Current

Low Output Voltage
vs Output Sink Current

Low Output Voltage
vs Output Sink Current

				I I I Vcc = 10V _
				-55°C		ApP.^--- M
				+25°C
						1+25°C
				+25°C MP"
			+25°C .7): 17:^2-
	---'''-

I I I

0.01

10

10

1.015

1.010

0.985

^V CC VOUT -- VOLTS

2.0
1.8

1.6

1.4
1.2

1.0
0.8
0.6

0.4 0.2 0

+125°C

-55°C

+25°C

5V Vcc 15V

NORMALIZED DELAY TIME

300

1.005

0.995

0.990

1.000

PROPAGATION DELAY -- ns

250

200

150

100

50

+25°C

SUPPLY CURRENT -- mA

8.0

6.0

4.0

2.0

Minimum Pulse Width
Required for Triggering

Supply Current Delay Time

vs Supply Voltage vs Temperature

1.015

·
·
·
·

·
·

150

7, 125
8 100

_w
w

⁰¹ 75

2 50

7

2 z

25

10.0

NORMALIZED DELAY TIME

0

1.010

1.005

1.000

0.995

0.990

0.985

10

1.0

to

0

1- 0.1

7
0

0.01

TYPICAL PERFORMANCE CHARACTERISTICS

Timer NE/SA/SE555/SE555C

CONTROL - VOLTAGE

.01pF THRESHOLD

DISCHARGE

7-7

TRIGGER

vcc

Astable Operation

vcc

DISCHARGE

CONTROL
VOLTAGE

.01pF 1 THRESHOLD

1:

3^V

TRIGGER

Monostable Operation

TYPICAL APPLICATIONS

Timer NE/SA/SE555/SE555C

TYPICAL APPLICATIONS

NOTE: All resistor values are in Q

Figure 1. AC Coupling of the Trigger Pulse

Trigger Pulse Width Requirements and Time Delays

Due to the nature of the trigger circuitry, the timer will trigger on the negative going edge of the input pulse. For the device to time out properly, it is necessary that the trigger voltage level be returned to some voltage greater than one third of the supply before the time out period. This can be achieved by making either the trigger pulse sufficiently short or by AC coupling into the trigger. By AC coupling the trigger, see Figure 1, a short negative going pulse is achieved when the trigger signal goes to ground. AC coupling is most frequently used in conjunction with a switch or a signal that goes to ground which initiates the timing cycle. Should the trigger be held low, without AC coupling, for a longer duration than the timing cycle the output will remain in a high state for the duration of the low trigger signal, without regard to the threshold comparator state. This is due to the predominance of Q15 on the base of Q16, controlling the state of the bi-stable flip-flop. When the trigger signal then returns to a high level, the output will fall immediately. Thus, the output signal will follow the trigger signal in this case.

Another consideration is the 'turn-off time". This is the measurement of the amount of time required after the threshold reaches 2/3 Vcc to turn the output low. To explain further, Q1 at the threshold input turns on after reaching 2/3 Vcc, which then turns on Q5, which turns on Q6. Current from Q6 turns on Q16 which turns Q17 off. This allows current from Q19 to turn on Q20 and Q24 to given an output low. These steps cause the 2jts max. delay as stated in the data sheet.

Also, a delay comparable to the turn-off time is the trigger release time. When the trigger is low, Qic, is on and turns on Q11 which turns on Q15. Q15 turns off Q16 and allows Q17 to turn on. This turns off current to Q20 and Q24, which results in output high. When the trigger is released, Q10 and Q11 shut off, Q15 turns off, Q16 turns on and the circuit then follows the same path and time delay explained as "turn off time". This trigger release time is very important in designing the trigger pulse width so as not to interfere with the output signal as explained previously.

SIEMENS

GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter

Area not flat

0.6

0.4

OQ
C)

I

5.9

5.5

0.6

0.4

E

E .5

c=,_

1.8
1.2

29

27

Cathode (Diode) Collector (Transistor) Approx. weight 0.5 g

0⁰.

Chip position

2

9.0
8.2

7.8
7.5

GEX06260

5.7

5.1 ^-6--

0 CO CNI CO 0 X CD

Malle in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

Wesentliche Merkmale

· Sehr enger Abstrahlwinkel

· GaAs-IR-LED, hergestellt im
Schmelzepitaxieverfahren

· Hohe Zuverlassigkeit

· Hohe Impulsbelastbarkeit

· Gruppiert lieferbar

· Gehausegleich mit SFH 484

Anwendungen

· IR-Fernsteuerung von Fernseh- and Rundfunkgeraten, Videorecordern, Lichtdimmern, Gersten

Features

· Extremely narrow half angle

· GaAs infrared emitting diode, fabricated in a liquid phase epitaxy process

· High reliability

· High pulse handling capability

· Available in groups

· Same package as SFH 484

Applications

· IR remote control of hi-fi and TV-sets, video tape recorders, dimmers,

of various equipment

Typ Type	Bestellnummer Ordering Code	Gehause Package
LD 274	Q62703-Q1031	5-mm-LED-Gehause (T 1 ^3/4), graugettintes EpoxyGiel,harz, Anschlusse im 2.54-mm-Raster (^1/101 Kathodenkennzeichnung: Kurzerer Lotspiefl, flat 5 mm LED package (T 1 ^3/4), grey colored epoxy resin lens, solder tabs lead spacing 2.54 mm (^1/10"), cathode marking: shorter solder lead, flat
LD 274-2^1)	Q62703-Q1819
LD 274-3	Q62703-Q1820

¹⁾ Nur auf Anfrage lieferbar. ¹⁾ Available only on request.

Grenzwerte (T_A = 25 °C) Maximum Ratings

Bezeichnung Description	Symbol Symbol	Wert Value	Einheit Unit
Betriebs- und Lagertemperatur Operating and storage temperature range	T · op T 1 stg	-- 55 ... + 100	°C
Sperrschichttemperatur Junction temperature	T ,	100	°C
Sperrspannung Reverse voltage	VR	5	V
Durchlaastrom Forward current	IF	100	mA
Stollstrom, tp = 10us, D = 0 Surge current	-IFSM	3	A
Verlustleistung Power dissipation	Ptot	165	mW
Warmewiderstand Thermal resistance	RthJA	450	K/W

Kennwerte (T_A = 25 °C) Characteristics

Bezeichnung Description	Symbol Symbol	Wert Value	Einheit Unit
Wellenlange der Strahlung Wavelength at peak emission IF = 100 mA, tp = 20 ms	kpeak	950	nm
Spektrale Bandbreite bei 50 % von Imax Spectral bandwidth at 50 % of Imax /F = 100 m A, tp = 20 ms	AX	55	nm
Abstrahlwinkel Half angle	ce	#177; 10	Grad
Aktive Chipflache Active chip area	A	0.09	mm2
Abmessungen der aktive Chipflache Dimension of the active chip area	L x B L x W	0.3 x 0.3	mm
Abstand Chipoberflache bis Linsenscheitel Distance chip front to lens top	H	4.9 ... 5.5	mm
Schaltzeiten, Ie von 10 % auf 90 % und von 90 % auf 10 %, bei IF = 100 mA, RL = 50 SI Switching times, I. from 10 % to 90 % and from 90 % to 10 %, IF = 100 mA, RL = 50 SI	tr, tf	1	Rs

Kennwerte (T_A = 25 °C) Characteristics

Bezeichnung Description	Symbol Symbol	Wert Value	Einheit Unit
Kapazitat Capacitance VR = 0 V, f = 1 MHz	Ce	25	pF
Durchlallspannung Forward voltage IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 .ts	VF VF	1.30 1.5) 1.90 2.5)	V V
Sperrstrom, VR = 5 V Reverse current	IR	0.01 1)	RA
Gesamtstrahlungsflufl Total radiant flux IF = 100 mA, tp = 20 ms	(De	15	mW
Temperaturkoeffizient von Ie bzw. (I)e, IF = 100 mA Temperature coefficient of 1. or (De, IF = 100 mA	TC,	-- 0.55	%X
Temperaturkoeffizient von VF, IF = 100 mA Temperature coefficient of VF, IF = 100 mA	TCv	-- 1.5	mV/K
Temperaturkoeffizient von X, IF = 100 mA Temperature coefficient of X, IF = 100 mA	TCA,	+ 0.3	nm/K

Gruppierung der Strahlstarke I. in Achsrichtung gemessen bei einem Raumwinkel S2 = 0.001 sr Grouping of radiant intensity l_e in axial direction at a solid angle of SI = 0.001 sr

Bezeichnung Description	Symbol Symbol	Wert Value			Einheit Unit
		LD 274	LD 274-2^1)	LD 274-3
Strahlstarke	Ie min	50	50	80	mW/sr
Radiant intensity	Ie max	--	100	--	mW/sr
IF = 100 mA, tp = 20 ms
Strahlstarke
Radiant intensity
IF = 1 A, tp = 100 45	^le tYP.	350	600	800	mW/sr

¹⁾ Nur auf Anfrage lieferbar. ¹⁾ Available only on request.

SIEMENS

Relative Irel^=f 100 Irel 80 60 40 20 0

spectral emission (X) OH 001938

Radiant intensity Single pulse, 10^2

tp =

f

(IF) OHR01038

IF =f (TA) 120 F mA 100 80 60 40 20 ^0

Max. permissible forward current 0HR00883

Ie 100 mA 20 j.ts

Ie (100

mA) 10^1 10° 10 10

^RthjA

^450

K/W

880 920 960

1000

nm 1060 A

10 ^1

0^° A

10^1

0 20 40 60 80 100 °C 120 TA

CIF

Forward current

IF = f (VF), single pulse t_p = 20 las

10 1 0HR01041

IF ^A

10°

10^-1

10²

15 2 25 3 35 4 V 4 5

V_F

Permissible pulse handling capability IF =f (t), Tc < 25 °C,

duty cycle D = parameter

10⁴

IF mA

5

5

10²

10^-5 10¹ 10^-3 10^-2 10¹ 10^° 10¹ 810²

0HR00860

max.

YP.

1

Radiation characteristics, I_re! =f ((p)

40^°

0°

10^°

1.0

0.8

0.6

0.4

20^°

40^°

60^°

80^°

100^° 120°

50^°

Emu Emu NNE;
Non Non Nom

IIIIIIII

111111 1/111/11

D = 0 005

I

161E1111111111111111111

PI nil 0 02

hi& 0 05

II.kIL MEM MEM MEM NMI EM
111:⁴1 Man NM

·
·Il 111
·
·Il
·
·Il
·
·Il
·
·

111 %V111
·111111

0.2

Mk MI

MI11111111111

1111111111115al 1111111111 111111

1111 111 1:1 11

11111111111110

IN