Memoire Online - Contribution à l'étude structurale et microstructurale de films ZnO obtenus par ablation laser

In this work, we prepared undoped (ZnO) and aluminium doped (AZO) thin films by pulser laser deposition (PLD) technique. Synthesized films have been on glass and silicon substrates heated at 450⁰C. The used source was a KrF eximer laser (248 nm, 25 ns, 2 J / cm²). Different experimentales technique have been carried out to analyse the fabricated films; the X-ray diffraction (XRD) for analysis of films structure; atomic force microscopy (AFM) used to study morphology and surface roughens, Rutherford backxattering spectroscopy for determination of the atomic composition and thickness of films. The transmittance was of the order 75% in visible with an optical band gap varying from 3.23 to 3.36 eV when the content of Al doping increases from 0 to 5 at.%.

ÉÞíÑØÈ ãæíäãáSÇÈ áãÚÊÓãáÇ ÚÇÚÔáÇ íáíÖÊ æãä Úã ÉíÓÇÏÓ ÇíØã 'åÊäæÔÎ Çã ÑíÛÊí ÚæäããáÇ

ÉãÚØã æ ÉãÚØã ÑíÛ ßäÒáÇ ÏíÓß äã ÉÞíÞÑ ÍÆÇÑÔ ÑíÖÍÊÈ ÉÑßÐãáÇ åÐ ÑÇØÅ í ÇäãÞ

.450^°C ÉÑÇÑÍ ÉÌÑÏ í ÇíÑÇÑÍ ÉäÎÓãáÇ ãæíÓáÓáÇ æ ÌÇÌÒáÇ ÏäÇÓã ìáÚ ÇÚÖæÈ íÑÒíááÇ áÇÕÆÊÓ7Ç

í ZnO ÉÍíÑÔá ÉíÑæáÈáÇ ÉíäÈáÇ . (248 nm, 25 ns, 2 J/cm²) eximer KrF ÑÒíááÇ æ æ ÍØÓáÇ ÉíÌæáæÑæã ÉÓÇÑÏá (AFM) ÉíÑÐáÇ ÉæÞáÇ ÑÌã ÉØÓÇæÈ ÇáíáÍÊ ãÊ æ .(002) åÇÌÊ7Ç Þæ ÞÇØäáÇ ÖÑÚÈ íÆÑãáÇ áÇÌãáÇ í 75% ÉÈÊÑ äã ÊÇäíÚáÇ ÉíÇÔ .ßãÓáÇ æ ÈíßÑÊáÇ ÏíÏÍÊá ÏÑÑæÑÏÑ

. ÇíÑÐ 5 % ìáÅ 0 äã ÏíÇÒÊáÇÈ ÏíÇÒÊÊ ãæíäãá~ÇÈ ÉãÚØã ÍÆÇÑÔáÇ äæßÊ ÇãÏäÚ 3.36 eV æ 3.23 äíÈ

É íÍÇÊãáÇ ÊÇãáßáÇ

. ÉíÑÐáÇ ÉæÞáÇ ÑÌã , íÑÒíááÇ áÇÕÆÊÓ~Ç , ãæíäãátÇÈ ãÚØã ßäÒáÇ ÏíÓß , ãÚØã ÑíÛ ßäÒáÇ ÏíÓß , ÉÞíÞÑáÇ ÍÆÇÑÔáÇ

Contribution à l'étude structurale et microstructurale de films ZnO obtenus par ablation laser

Abstract